Correlation between Hardness and Chemical Shift of SiOC Film by FTIR and XRD Analysis

SiOC films prepared by the capacitively coupled plasma chemical vapor deposition were analyzed by Fourier Transform Infrared spectroscopy, nanoindentation, capacitance and Xray diffraction patterns to observe the crystallinity and chemical shift of SiOC. The capacitance decreased after annealing process, and the dielectric constant was also decreased by annealing due to the reduction of polarization. In the SiOC annealed at 500°C, the blue shift in the range of 950~1200 cm -1 by FTIR analysis showed the peak of 33 o in XRD pattern, which indicates the improvement of crystrallinity. Moreover, the SiOC with the peak of 33 o in XRD pattern increased the hardness. Red shift was due to the weak bonding strength and then decreased the hardness in SiOC film. SiOC film with red shift does not involve the peak of 33 o in XRD pattern. In 32,34 and36 smaples with red shifts, the sample 34 was the lowest dielectric constant, because of high quality of amorphous as non-polarity.